?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com fqp6n40cf/fqpf6n40cf rev.c0 fqp6n40cf/fqpf6n40cf 400v n-channel mosfet frfet tm february, 2012 fqp6n40cf/fqpf6n40cf 400v n-channel mosfet features ? 6a, 400v, r ds(on) = 1.1 @v gs = 10 v ? low gate charge ( typical 16nc) ? low crss ( typical 15pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? fast recovery body diode (typical 70ns) description these n-channel enhancement mode power field effect transistors are produced using fa irchild?s proprietary, planar stripe, dmos technology. this advanced technology has been e specially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. to-220 fqp series g s d to-220f fqpf series g s d d g s absolute maximum ratings symbol parameter fqp6n40cf fqpf6n40cf units v dss drain-source voltage 400 v i d drain current - continuous (t c = 25c) 6 6* a - continuous (t c = 100c) 3.6 3.6* a i dm drain current - pulsed (note 1) 24 24* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 270 mj i ar avalanche current (note 1) 6 a e ar repetitive avalanche energy (note 1) 73 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25c) 73 38 w - derate above 25c 0.58 0.3 w/ c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 c thermal characteristics symbol parameter fqp6n40cf fqpf6n40cf units r jc thermal resistance, junction-to-case 1.71 3.31 c /w r cs thermal resistance, case-to-sink 0.5 -- c /w r ja thermal resistance, junction-to-ambient 62.5 62.5 c /w * drain current limited by maximum junction temperature
2 www.fairchildsemi.com fqp6n40cf/fqpf6n40cf rev.c0 fqp6n40cf/fqpf6n40cf 400v n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity fqp6n40cf fqp6n40cf to-220 - - 50 fqpf6n40cf fqpf6n40cf to-220f - - 50 electrical characteristics t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 400 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.54 -- v/c i dss zero gate voltage drain current v ds = 400 v, v gs = 0 v -- -- 1 a v ds = 320 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3 a -- 0.9 1.1 g fs forward transconductance v ds = 40 v, i d = 3 a (note 4) -- 4.7 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 480 625 pf c oss output capacitance -- 80 105 pf c rss reverse transfer capacitance -- 15 20 pf switching characteristics t d(on) turn-on delay time v dd = 200 v, i d = 6 a, r g = 25 (note 4, 5) -- 13 35 ns t r turn-on rise time -- 65 140 ns t d(off) turn-off delay time -- 21 55 ns t f turn-off fall time -- 38 85 ns q g total gate charge v ds = 320 v, i d = 6 a, v gs = 10 v (note 4, 5) -- 16 20 nc q gs gate-source charge -- 2.3 -- nc q gd gate-drain charge -- 8.2 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 6 a i sm maximum pulsed drain-source diode forward current -- -- 24 a v sd drain-source diode forward voltage v gs = 0 v, i s = 6 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 6 a, di f / dt = 100 a/ s (note 4) -- 70 -- ns q rr reverse recovery charge -- 0.12 -- c notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 13.7mh, i as = 6a, v dd = 50v, r g = 25 , starting t j = 25c 3. i sd 6a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 30 0 s, duty cycle 2% 5. essentially independent of operating temperature
3 www.fairchildsemi.com fqp6n40cf/fqpf6n40cf rev.c0 fqp6n40cf/fqpf6n40cf 400v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v * notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 24681 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c * notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariati on vs. s ource current and temperatue 0 5 10 15 20 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 o c * notes : 1. v gs = 0v 2. 250 s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 5 10 15 20 0 2 4 6 8 10 12 v ds = 200v v ds = 80v v ds = 320v * note : i d = 6a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fqp6n40cf/fqpf6n40cf rev.c0 fqp6n40cf/fqpf6n40cf 400v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 3 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area for fqp6n40cf for fqpf6n40cf 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s 100 ms dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0 1 2 3 4 5 6 i d , drain current [a] t c , case temperature [ o c]
5 www.fairchildsemi.com fqp6n40cf/fqpf6n40cf rev.c0 fqp6n40cf/fqpf6n40cf 400v n-channel mosfet typical performance characteristics (continued) figure 11-1. ransient thermal response curve for fqp6n40cf 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * n otes : 1 . z jc (t) = 1.71 o c/w max. 2 . d u ty f a cto r, d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s q uare w ave p ulse d uration [sec] t 1 p dm t 2 figure 11-2. transient thermal response curve for fqpf6n40cf 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * n otes : 1 . z jc (t) = 3.31 o c/w max. 2 . d u ty f a cto r, d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s q uare w ave p ulse d uration [sec] t 1 p dm t 2
6 www.fairchildsemi.com fqp6n40cf/fqpf6n40cf rev.c0 fqp6n40cf/fqpf6n40cf 400v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- 7 www.fairchildsemi.com fqp6n40cf/fqpf6n40cf rev.c0 fqp6n40cf/fqpf6n40cf 400v n-channel mosfet
8 www.fairchildsemi.com fqp6n40cf/fqpf6n40cf rev.c0 fqp6n40cf/fqpf6n40cf 400v n-channel mosfet dimensions in millimeters mechanical dimensions to-220
9 www.fairchildsemi.com fqp6n40cf/fqpf6n40cf rev.c0 fqp6n40cf/fqpf6n40cf 400v n-channel mosfet mechanical dimensions (continued) (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 to-220f dimensions in millimeters
10 www.fairchildsemi.com fqp6n40cf/fqpf6n40cf rev.c0 fqp6n40cf/fqpf6n40cf 400v n-channel mosfet trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or design. fairchild does not assume any li ability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwid e terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support d evices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life su pport, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life sup port device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * p serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? tm datasheet identification product status definition advance information for mative / in design datasheet contains the design specifications for product developm ent. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification n eeded full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-c ounterfeiting policy. fairchild?s anti-co unterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many probl ems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of producti on and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts . fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by co untry on our web page cited above. products custom ers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have fu ll traceability, meet fairchild?s quality st andards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product inform ation. fairchild and our authorized dist ributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 tm ?
|
